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PBSS5250X,115

PBSS5250X,115

PBSS5250X,115

Nexperia USA Inc.

PBSS5250X,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

PBSS5250X,115 Datasheet

non-compliant

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Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2003
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 1W
Terminal Form FLAT
Frequency 100MHz
Base Part Number PBSS5250
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 1W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 100MHz
Polarity/Channel Type NPN
Transistor Type PNP
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 1A 2V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 320mV @ 200mA, 2A
Collector Emitter Breakdown Voltage 50V
Transition Frequency 100MHz
Collector Emitter Saturation Voltage 380mV
Max Breakdown Voltage 50V
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 5V
hFE Min 200
Height 1.6mm
Length 4.6mm
Width 2.6mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.280385 $0.280385
10 $0.264514 $2.64514
100 $0.249542 $24.9542
500 $0.235416 $117.708
1000 $0.222091 $222.091
PBSS5250X,115 Product Details

PBSS5250X,115 Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 1A 2V.This design offers maximum flexibility with a collector emitter saturation voltage of 380mV.A VCE saturation (Max) of 320mV @ 200mA, 2A means Ic has reached its maximum value(saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In this part, there is a transition frequency of 100MHz.Single BJT transistor can be broken down at a voltage of 50V volts.The maximum collector current is 2A volts.

PBSS5250X,115 Features


the DC current gain for this device is 200 @ 1A 2V
a collector emitter saturation voltage of 380mV
the vce saturation(Max) is 320mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz

PBSS5250X,115 Applications


There are a lot of Nexperia USA Inc. PBSS5250X,115 applications of single BJT transistors.

  • Inverter
  • Interface
  • Driver
  • Muting

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