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PBSS5330PA,135

PBSS5330PA,135

PBSS5330PA,135

Nexperia USA Inc.

PBSS5330PA,135 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

PBSS5330PA,135 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-PowerUDFN
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2015
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Max Power Dissipation 500mW
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number PBSS5330
Pin Count 3
JESD-30 Code R-PDSO-N3
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Power - Max 500mW
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 320mV
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 3A 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 320mV @ 300mA, 3A
Collector Emitter Breakdown Voltage 30V
Transition Frequency 100MHz
Max Breakdown Voltage 30V
Frequency - Transition 165MHz
Turn Off Time-Max (toff) 200ns
Turn On Time-Max (ton) 70ns
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
10,000 $0.13090 $1.309
PBSS5330PA,135 Product Details

PBSS5330PA,135 Overview


In this device, the DC current gain is 100 @ 3A 2V, which is the ratio between the base current and the collector current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 320mV @ 300mA, 3A.As a result, the part has a transition frequency of 100MHz.Single BJT transistor can be broken down at a voltage of 30V volts.Maximum collector currents can be below 3A volts.

PBSS5330PA,135 Features


the DC current gain for this device is 100 @ 3A 2V
the vce saturation(Max) is 320mV @ 300mA, 3A
a transition frequency of 100MHz

PBSS5330PA,135 Applications


There are a lot of Nexperia USA Inc. PBSS5330PA,135 applications of single BJT transistors.

  • Muting
  • Inverter
  • Interface
  • Driver

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