BCP56-16T1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
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BCP56-16T1G Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Surface Mount
YES
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Cut Tape (CT)
Published
2005
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
80V
Max Power Dissipation
1.5W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
1A
Frequency
130MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
BCP56
Pin Count
4
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.5W
Case Connection
COLLECTOR
Transistor Application
AMPLIFIER
Gain Bandwidth Product
130MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
80V
Transition Frequency
130MHz
Collector Emitter Saturation Voltage
500mV
Max Breakdown Voltage
80V
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
5V
hFE Min
25
Height
1.57mm
Length
6.5mm
Width
3.5mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.229800
$0.2298
10
$0.216792
$2.16792
100
$0.204521
$20.4521
500
$0.192945
$96.4725
1000
$0.182023
$182.023
BCP56-16T1G Product Details
BCP56-16T1G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 150mA 2V DC current gain.A collector emitter saturation voltage of 500mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 1A for this device.Parts of this part have transition frequencies of 130MHz.Breakdown input voltage is 80V volts.Maximum collector currents can be below 1A volts.
BCP56-16T1G Features
the DC current gain for this device is 100 @ 150mA 2V a collector emitter saturation voltage of 500mV the vce saturation(Max) is 500mV @ 50mA, 500mA the emitter base voltage is kept at 5V the current rating of this device is 1A a transition frequency of 130MHz
BCP56-16T1G Applications
There are a lot of ON Semiconductor BCP56-16T1G applications of single BJT transistors.