BUL1102EFP Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 12 @ 2A 5V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.5V @ 400mA, 2A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 12V.A maximum collector current of 4A volts can be achieved.
BUL1102EFP Features
the DC current gain for this device is 12 @ 2A 5V
the vce saturation(Max) is 1.5V @ 400mA, 2A
the emitter base voltage is kept at 12V
BUL1102EFP Applications
There are a lot of STMicroelectronics BUL1102EFP applications of single BJT transistors.
- Driver
- Muting
- Interface
- Inverter
