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BUL1102EFP

  • BUL1102EFP
  • BUL1102EFP

BUL1102EFP

BUL1102EFP

STMicroelectronics

BUL1102EFP datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website

SOT-23

BUL1102EFP Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 30W
Terminal Position SINGLE
Base Part Number BUL1102
Pin Count 3
Number of Elements 1
Configuration SINGLE
Power Dissipation 70W
Case Connection ISOLATED
Power - Max 30W
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 450V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 12 @ 2A 5V
Current - Collector Cutoff (Max) 100μA
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 1.5V @ 400mA, 2A
Collector Emitter Breakdown Voltage 450V
Emitter Base Voltage (VEBO) 12V
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.22000 $1.22
50 $1.04860 $52.43
100 $0.87270 $87.27
500 $0.73198 $365.99
1,000 $0.59128 $0.59128
2,500 $0.55610 $1.1122
5,000 $0.53265 $2.66325
BUL1102EFP Product Details

BUL1102EFP Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 12 @ 2A 5V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.5V @ 400mA, 2A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 12V.A maximum collector current of 4A volts can be achieved.

BUL1102EFP Features


the DC current gain for this device is 12 @ 2A 5V
the vce saturation(Max) is 1.5V @ 400mA, 2A
the emitter base voltage is kept at 12V

BUL1102EFP Applications


There are a lot of STMicroelectronics BUL1102EFP applications of single BJT transistors.

  • Driver
  • Muting
  • Interface
  • Inverter

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