2SD1803S-H datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2SD1803S-H Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 week ago)
Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins
3
Operating Temperature
150°C TJ
Packaging
Bulk
Published
2012
JESD-609 Code
e6
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin/Bismuth (Sn/Bi)
Max Power Dissipation
1W
Reach Compliance Code
not_compliant
Base Part Number
2SD1803
Pin Count
3
Power - Max
1W
Halogen Free
Halogen Free
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
50V
Max Collector Current
5A
DC Current Gain (hFE) (Min) @ Ic, Vce
140 @ 500mA 2V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
400mV @ 150mA, 3A
Collector Emitter Breakdown Voltage
50V
Frequency - Transition
180MHz
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
6V
hFE Min
70
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.773000
$0.773
10
$0.729245
$7.29245
100
$0.687967
$68.7967
500
$0.649026
$324.513
1000
$0.612288
$612.288
2SD1803S-H Product Details
2SD1803S-H Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 140 @ 500mA 2V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 150mA, 3A.The emitter base voltage can be kept at 6V for high efficiency.Maximum collector currents can be below 5A volts.
2SD1803S-H Features
the DC current gain for this device is 140 @ 500mA 2V the vce saturation(Max) is 400mV @ 150mA, 3A the emitter base voltage is kept at 6V
2SD1803S-H Applications
There are a lot of ON Semiconductor 2SD1803S-H applications of single BJT transistors.