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PBSS5350TVL

PBSS5350TVL

PBSS5350TVL

Nexperia USA Inc.

PBSS5350TVL datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

PBSS5350TVL Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Part Status Active
Number of Terminations 3
Terminal Position DUAL
Terminal Form GULL WING
Pin Count 3
JESD-30 Code R-PDSO-G3
Number of Elements 1
Configuration SINGLE
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 1A 2V
Current - Collector Cutoff (Max) 100nA ICBO
JEDEC-95 Code TO-236AB
Vce Saturation (Max) @ Ib, Ic 390mV @ 300mA, 3A
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 2A
Transition Frequency 100MHz
Frequency - Transition 100MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.490000 $0.49
10 $0.462264 $4.62264
100 $0.436098 $43.6098
500 $0.411413 $205.7065
1000 $0.388126 $388.126
PBSS5350TVL Product Details

PBSS5350TVL Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 1A 2V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 390mV @ 300mA, 3A.In the part, the transition frequency is 100MHz.The device has a 50V maximal voltage - Collector Emitter Breakdown.

PBSS5350TVL Features


the DC current gain for this device is 200 @ 1A 2V
the vce saturation(Max) is 390mV @ 300mA, 3A
a transition frequency of 100MHz

PBSS5350TVL Applications


There are a lot of Nexperia USA Inc. PBSS5350TVL applications of single BJT transistors.

  • Interface
  • Driver
  • Muting
  • Inverter

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