PBSS5350TVL datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
PBSS5350TVL Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
Part Status
Active
Number of Terminations
3
Terminal Position
DUAL
Terminal Form
GULL WING
Pin Count
3
JESD-30 Code
R-PDSO-G3
Number of Elements
1
Configuration
SINGLE
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 1A 2V
Current - Collector Cutoff (Max)
100nA ICBO
JEDEC-95 Code
TO-236AB
Vce Saturation (Max) @ Ib, Ic
390mV @ 300mA, 3A
Voltage - Collector Emitter Breakdown (Max)
50V
Current - Collector (Ic) (Max)
2A
Transition Frequency
100MHz
Frequency - Transition
100MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.490000
$0.49
10
$0.462264
$4.62264
100
$0.436098
$43.6098
500
$0.411413
$205.7065
1000
$0.388126
$388.126
PBSS5350TVL Product Details
PBSS5350TVL Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 1A 2V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 390mV @ 300mA, 3A.In the part, the transition frequency is 100MHz.The device has a 50V maximal voltage - Collector Emitter Breakdown.
PBSS5350TVL Features
the DC current gain for this device is 200 @ 1A 2V the vce saturation(Max) is 390mV @ 300mA, 3A a transition frequency of 100MHz
PBSS5350TVL Applications
There are a lot of Nexperia USA Inc. PBSS5350TVL applications of single BJT transistors.