MMBT2222AWT3G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
MMBT2222AWT3G Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Power Dissipation
150mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Frequency
300MHz
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
MMBT2222A
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
150mW
Transistor Application
AMPLIFIER
Gain Bandwidth Product
300MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
40V
Max Collector Current
600mA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA 10V
Vce Saturation (Max) @ Ib, Ic
1V @ 50mA, 500mA
Collector Emitter Breakdown Voltage
40V
Transition Frequency
300MHz
Collector Emitter Saturation Voltage
1V
Collector Base Voltage (VCBO)
75V
Emitter Base Voltage (VEBO)
6V
hFE Min
100
Turn Off Time-Max (toff)
285ns
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
10,000
$0.01949
$0.1949
30,000
$0.01762
$0.5286
50,000
$0.01575
$0.7875
100,000
$0.01482
$1.482
250,000
$0.01326
$3.315
MMBT2222AWT3G Product Details
MMBT2222AWT3G Overview
This device has a DC current gain of 100 @ 150mA 10V, which is the ratio between the collector current and the base current.As it features a collector emitter saturation voltage of 1V, it allows for maximum design flexibility.When VCE saturation is 1V @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Keeping the emitter base voltage at 6V can result in a high level of efficiency.As a result, the part has a transition frequency of 300MHz.A maximum collector current of 600mA volts is possible.
MMBT2222AWT3G Features
the DC current gain for this device is 100 @ 150mA 10V a collector emitter saturation voltage of 1V the vce saturation(Max) is 1V @ 50mA, 500mA the emitter base voltage is kept at 6V a transition frequency of 300MHz
MMBT2222AWT3G Applications
There are a lot of ON Semiconductor MMBT2222AWT3G applications of single BJT transistors.