MMBT2222AWT3G Overview

This device has a DC current gain of 100 @ 150mA 10V, which is the ratio between the collector current and the base current.As it features a collector emitter saturation voltage of 1V, it allows for maximum design flexibility.When VCE saturation is 1V @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Keeping the emitter base voltage at 6V can result in a high level of efficiency.As a result, the part has a transition frequency of 300MHz.A maximum collector current of 600mA volts is possible.

MMBT2222AWT3G Features

the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz

MMBT2222AWT3G Applications

There are a lot of ON Semiconductor MMBT2222AWT3G applications of single BJT transistors.

• Interface
• Inverter
• Driver
• Muting