MMBT3904FA-7B datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
MMBT3904FA-7B Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
3-XFDFN
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2013
Series
Automotive, AEC-Q101
JESD-609 Code
e4
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature
HIGH RELIABILITY
Subcategory
Other Transistors
Max Power Dissipation
435mW
Peak Reflow Temperature (Cel)
260
Frequency
300MHz
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
MMBT3904
JESD-30 Code
R-PSSO-N2
Number of Elements
1
Element Configuration
Single
Power Dissipation
435mW
Case Connection
COLLECTOR
Gain Bandwidth Product
300MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
40V
Max Collector Current
200mA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 10mA 1V
Vce Saturation (Max) @ Ib, Ic
300mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage
40V
Transition Frequency
300MHz
Collector Emitter Saturation Voltage
300mV
Max Breakdown Voltage
40V
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
6V
Continuous Collector Current
200mA
Turn Off Time-Max (toff)
250ns
Turn On Time-Max (ton)
70ns
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.189000
$0.189
10
$0.178302
$1.78302
100
$0.168209
$16.8209
500
$0.158688
$79.344
1000
$0.149706
$149.706
MMBT3904FA-7B Product Details
MMBT3904FA-7B Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 10mA 1V.This design offers maximum flexibility with a collector emitter saturation voltage of 300mV.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 5mA, 50mA.A 200mA continuous collector voltage is necessary to achieve high efficiency.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A transition frequency of 300MHz is present in the part.A breakdown input voltage of 40V volts can be used.Single BJT transistor is possible to have a collector current as low as 200mA volts at Single BJT transistors maximum.
MMBT3904FA-7B Features
the DC current gain for this device is 100 @ 10mA 1V a collector emitter saturation voltage of 300mV the vce saturation(Max) is 300mV @ 5mA, 50mA the emitter base voltage is kept at 6V a transition frequency of 300MHz
MMBT3904FA-7B Applications
There are a lot of Diodes Incorporated MMBT3904FA-7B applications of single BJT transistors.