PBSS5560PA,115 Overview

DC current gain in this device equals 150 @ 2A 2V, which is the ratio of the base current to the collector current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 450mV @ 250mA, 5A.If the emitter base voltage is kept at -7V, a high level of efficiency can be achieved.A transition frequency of 90MHz is present in the part.Breakdown input voltage is 60V volts.When collector current reaches its maximum, it can reach 5A volts.

PBSS5560PA,115 Features

the DC current gain for this device is 150 @ 2A 2V
the vce saturation(Max) is 450mV @ 250mA, 5A
the emitter base voltage is kept at -7V
a transition frequency of 90MHz

PBSS5560PA,115 Applications

There are a lot of Nexperia USA Inc. PBSS5560PA,115 applications of single BJT transistors.

• Driver
• Inverter
• Muting
• Interface