ZXTN2010ZTA Overview

This device has a DC current gain of 100 @ 2A 1V, which is the ratio between the collector current and the base current.With a collector emitter saturation voltage of 170mV, it offers maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 230mV @ 300mA, 6A.For high efficiency, the continuous collector voltage must be kept at 5A.Emitter base voltages of 7V can achieve high levels of efficiency.Its current rating is 5A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.In this part, there is a transition frequency of 130MHz.The breakdown input voltage is 60V volts.Single BJT transistor is possible for the collector current to fall as low as 5A volts at Single BJT transistors maximum.

ZXTN2010ZTA Features

the DC current gain for this device is 100 @ 2A 1V
a collector emitter saturation voltage of 170mV
the vce saturation(Max) is 230mV @ 300mA, 6A
the emitter base voltage is kept at 7V
the current rating of this device is 5A
a transition frequency of 130MHz

ZXTN2010ZTA Applications

There are a lot of Diodes Incorporated ZXTN2010ZTA applications of single BJT transistors.

• Interface
• Muting
• Inverter
• Driver