JANTX2N2906AUB Overview

In this device, the DC current gain is 40 @ 150mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Keeping the emitter base voltage at 5V can result in a high level of efficiency.This product comes in a UB device package from the supplier.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.Single BJT transistor is possible to have a collector current as low as 600mA volts at Single BJT transistors maximum.

JANTX2N2906AUB Features

the DC current gain for this device is 40 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
the supplier device package of UB

JANTX2N2906AUB Applications

There are a lot of Microsemi Corporation JANTX2N2906AUB applications of single BJT transistors.

• Driver
• Muting
• Interface
• Inverter