2SD1757KT146Q Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 100mA 3V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 50mA, 500mA.Continuous collector voltage should be kept at 500mA for high efficiency.If the emitter base voltage is kept at 6.5V, a high level of efficiency can be achieved.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.Parts of this part have transition frequencies of 150MHz.Single BJT transistor can take a breakdown input voltage of 15V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
2SD1757KT146Q Features
the DC current gain for this device is 120 @ 100mA 3V
the vce saturation(Max) is 400mV @ 50mA, 500mA
the emitter base voltage is kept at 6.5V
the current rating of this device is 500mA
a transition frequency of 150MHz
2SD1757KT146Q Applications
There are a lot of ROHM Semiconductor 2SD1757KT146Q applications of single BJT transistors.
- Inverter
- Muting
- Interface
- Driver
