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PBSS8110Y,115

PBSS8110Y,115

PBSS8110Y,115

Nexperia USA Inc.

PBSS8110Y,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

PBSS8110Y,115 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 625mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Frequency 100MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number PBSS8110
Pin Count 6
Number of Elements 1
Element Configuration Single
Power Dissipation 625mW
Transistor Application SWITCHING
Gain Bandwidth Product 100MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 250mA 10V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 200mV @ 100mA, 1A
Collector Emitter Breakdown Voltage 100V
Transition Frequency 100MHz
Max Breakdown Voltage 100V
Collector Base Voltage (VCBO) 120V
Emitter Base Voltage (VEBO) 5V
Height 6.35mm
Length 6.35mm
Width 6.35mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $12.091249 $12.091249
10 $11.406839 $114.06839
100 $10.761169 $1076.1169
500 $10.152045 $5076.0225
1000 $9.577402 $9577.402
PBSS8110Y,115 Product Details

PBSS8110Y,115 Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 150 @ 250mA 10V.When VCE saturation is 200mV @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.There is a transition frequency of 100MHz in the part.A breakdown input voltage of 100V volts can be used.Maximum collector currents can be below 1A volts.

PBSS8110Y,115 Features


the DC current gain for this device is 150 @ 250mA 10V
the vce saturation(Max) is 200mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz

PBSS8110Y,115 Applications


There are a lot of Nexperia USA Inc. PBSS8110Y,115 applications of single BJT transistors.

  • Driver
  • Interface
  • Muting
  • Inverter

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