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2SD2657KT146

2SD2657KT146

2SD2657KT146

ROHM Semiconductor

2SD2657KT146 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SD2657KT146 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 13 Weeks
Contact Plating Copper, Silver, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 1998
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination SMD/SMT
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Subcategory Other Transistors
Voltage - Rated DC 30V
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 1.5A
Frequency 330MHz
Tim[email protected] Reflow Temperature-Max (s) 10
Base Part Number 2SD2657
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 200mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 330MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 270 @ 100mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 350mV @ 50mA, 1A
Collector Emitter Breakdown Voltage 30V
Transition Frequency 330MHz
Collector Emitter Saturation Voltage 160mV
Max Breakdown Voltage 30V
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 6V
hFE Min 270
Continuous Collector Current 1.5A
Height 1mm
Length 2.9mm
Width 1.6mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.225784 $1.225784
10 $1.156400 $11.564
100 $1.090943 $109.0943
500 $1.029192 $514.596
1000 $0.970936 $970.936
2SD2657KT146 Product Details

2SD2657KT146 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 270 @ 100mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 160mV, which allows maximum flexibilSingle BJT transistory in design.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 350mV @ 50mA, 1A.For high efficiency, the continuous collector voltage must be kept at 1.5A.The emitter base voltage can be kept at 6V for high efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (1.5A).A transition frequency of 330MHz is present in the part.Single BJT transistor can be broken down at a voltage of 30V volts.In extreme cases, the collector current can be as low as 1.5A volts.

2SD2657KT146 Features


the DC current gain for this device is 270 @ 100mA 2V
a collector emitter saturation voltage of 160mV
the vce saturation(Max) is 350mV @ 50mA, 1A
the emitter base voltage is kept at 6V
the current rating of this device is 1.5A
a transition frequency of 330MHz

2SD2657KT146 Applications


There are a lot of ROHM Semiconductor 2SD2657KT146 applications of single BJT transistors.

  • Muting
  • Interface
  • Inverter
  • Driver

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