2SD2657KT146 Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 270 @ 100mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 160mV, which allows maximum flexibilSingle BJT transistory in design.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 350mV @ 50mA, 1A.For high efficiency, the continuous collector voltage must be kept at 1.5A.The emitter base voltage can be kept at 6V for high efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (1.5A).A transition frequency of 330MHz is present in the part.Single BJT transistor can be broken down at a voltage of 30V volts.In extreme cases, the collector current can be as low as 1.5A volts.

2SD2657KT146 Features

the DC current gain for this device is 270 @ 100mA 2V
a collector emitter saturation voltage of 160mV
the vce saturation(Max) is 350mV @ 50mA, 1A
the emitter base voltage is kept at 6V
the current rating of this device is 1.5A
a transition frequency of 330MHz

2SD2657KT146 Applications

There are a lot of ROHM Semiconductor 2SD2657KT146 applications of single BJT transistors.

• Muting
• Interface
• Inverter
• Driver