MPS650ZL1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
MPS650ZL1G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package
TO-92-3
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Box (TB)
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
625mW
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
75 @ 1A 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 200mA, 2A
Voltage - Collector Emitter Breakdown (Max)
40V
Current - Collector (Ic) (Max)
2A
Frequency - Transition
75MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.21000
$0.21
500
$0.2079
$103.95
1000
$0.2058
$205.8
1500
$0.2037
$305.55
2000
$0.2016
$403.2
2500
$0.1995
$498.75
MPS650ZL1G Product Details
MPS650ZL1G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 75 @ 1A 2V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.The product comes in the supplier device package of TO-92-3.Detection of Collector Emitter Breakdown at 40V maximal voltage is present.
MPS650ZL1G Features
the DC current gain for this device is 75 @ 1A 2V the vce saturation(Max) is 500mV @ 200mA, 2A the supplier device package of TO-92-3
MPS650ZL1G Applications
There are a lot of Rochester Electronics, LLC MPS650ZL1G applications of single BJT transistors.