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MPS650ZL1G

MPS650ZL1G

MPS650ZL1G

Rochester Electronics, LLC

MPS650ZL1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

MPS650ZL1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package TO-92-3
Operating Temperature -55°C~150°C TJ
Packaging Tape & Box (TB)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 625mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 75 @ 1A 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 200mA, 2A
Voltage - Collector Emitter Breakdown (Max) 40V
Current - Collector (Ic) (Max) 2A
Frequency - Transition 75MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.21000 $0.21
500 $0.2079 $103.95
1000 $0.2058 $205.8
1500 $0.2037 $305.55
2000 $0.2016 $403.2
2500 $0.1995 $498.75
MPS650ZL1G Product Details

MPS650ZL1G Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 75 @ 1A 2V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.The product comes in the supplier device package of TO-92-3.Detection of Collector Emitter Breakdown at 40V maximal voltage is present.

MPS650ZL1G Features


the DC current gain for this device is 75 @ 1A 2V
the vce saturation(Max) is 500mV @ 200mA, 2A
the supplier device package of TO-92-3

MPS650ZL1G Applications


There are a lot of Rochester Electronics, LLC MPS650ZL1G applications of single BJT transistors.

  • Interface
  • Inverter
  • Muting
  • Driver

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