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2SB1124T-TD-E

2SB1124T-TD-E

2SB1124T-TD-E

ON Semiconductor

2SB1124T-TD-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

2SB1124T-TD-E Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2003
JESD-609 Code e6
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Bismuth (Sn/Bi)
Max Power Dissipation 500mW
Terminal Form FLAT
Frequency 150MHz
Base Part Number 2SB1124
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 500mW
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 150MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 100mA 2V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 700mV @ 100mA, 2A
Collector Emitter Breakdown Voltage 50V
Transition Frequency 150MHz
Collector Emitter Saturation Voltage -700mV
Max Breakdown Voltage 50V
Collector Base Voltage (VCBO) -60V
Emitter Base Voltage (VEBO) -6V
Height 1.5mm
Length 4.5mm
Width 2.5mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.024447 $0.024447
10 $0.023063 $0.23063
100 $0.021758 $2.1758
500 $0.020526 $10.263
1000 $0.019365 $19.365
2SB1124T-TD-E Product Details

2SB1124T-TD-E Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 100mA 2V.As it features a collector emitter saturation voltage of -700mV, it allows for maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 700mV @ 100mA, 2A.With the emitter base voltage set at -6V, an efficient operation can be achieved.The part has a transition frequency of 150MHz.As a result, it can handle voltages as low as 50V volts.During maximum operation, collector current can be as low as 3A volts.

2SB1124T-TD-E Features


the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 100mA, 2A
the emitter base voltage is kept at -6V
a transition frequency of 150MHz

2SB1124T-TD-E Applications


There are a lot of ON Semiconductor 2SB1124T-TD-E applications of single BJT transistors.

  • Interface
  • Inverter
  • Muting
  • Driver

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