PBSS8110Z,135 Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 150 @ 250mA 10V.A collector emitter saturation voltage of 200mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 200mV @ 100mA, 1A.Emitter base voltages of 5V can achieve high levels of efficiency.There is a transition frequency of 100MHz in the part.A breakdown input voltage of 100V volts can be used.Maximum collector currents can be below 1A volts.

PBSS8110Z,135 Features

the DC current gain for this device is 150 @ 250mA 10V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz

PBSS8110Z,135 Applications

There are a lot of Nexperia USA Inc. PBSS8110Z,135 applications of single BJT transistors.

• Muting
• Interface
• Inverter
• Driver