2SC4082T106P Overview
In this device, the DC current gain is 82 @ 10mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.As it features a collector emitter saturation voltage of 500mV, it allows for maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 4mA, 20mA.Continuous collector voltage should be kept at 50mA for high efficiency.Emitter base voltages of 3V can achieve high levels of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.A transition frequency of 1500MHz is present in the part.An input voltage of 20V volts is the breakdown voltage.The maximum collector current is 50mA volts.
2SC4082T106P Features
the DC current gain for this device is 82 @ 10mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 4mA, 20mA
the emitter base voltage is kept at 3V
the current rating of this device is 50mA
a transition frequency of 1500MHz
2SC4082T106P Applications
There are a lot of ROHM Semiconductor 2SC4082T106P applications of single BJT transistors.
- Interface
- Muting
- Inverter
- Driver
