PH8230E,115

new-10%

Manufacturer part number:PH8230E,115

Manufacturer:Nexperia USA Inc.

Description:MOSFET N-CH 30V 67A LFPAK

Case Package:SOT-23

Datasheet:PH8230E,115 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SC-100, SOT-669
Number of Pins	5
Packaging	Cut Tape (CT)
Published	1997
Series	TrenchMOS™
JESD-609 Code	e3
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	62.5W
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Pin Count	4
Reference Standard	IEC-60134
JESD-30 Code	R-PSSO-G4
Number of Elements	1
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	62.5W
Case Connection	DRAIN
Turn On Delay Time	28 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	8.2m Ω @ 10A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	1400pF @ 10V
Current - Continuous Drain (Id) @ 25°C	67A Tc
Gate Charge (Qg) (Max) @ Vgs	14nC @ 5V
Rise Time	44ns
Fall Time (Typ)	21 ns
Turn-Off Delay Time	33 ns
Continuous Drain Current (ID)	67A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.0132Ohm
Drain to Source Breakdown Voltage	30V
Pulsed Drain Current-Max (IDM)	268A
Height	1.1mm
Length	5mm
Width	4.1mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free