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PHP27NQ11T,127

PHP27NQ11T,127

PHP27NQ11T,127

Nexperia USA Inc.

MOSFET (Metal Oxide) N-Channel Tube 50m Ω @ 14A, 10V ±20V 1240pF @ 25V 30nC @ 10V TO-220-3

SOT-23

PHP27NQ11T,127 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series TrenchMOS™
Published 2010
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.75
Technology MOSFET (Metal Oxide)
Pin Count 3
Number of Elements 1
Power Dissipation-Max 107W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 107W
Case Connection DRAIN
Turn On Delay Time 12 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 50m Ω @ 14A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1240pF @ 25V
Current - Continuous Drain (Id) @ 25°C 27.6A Tc
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Rise Time 43ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 24 ns
Turn-Off Delay Time 32 ns
Continuous Drain Current (ID) 27.6A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 110V
Drain-source On Resistance-Max 0.05Ohm
Drain to Source Breakdown Voltage 110V
Pulsed Drain Current-Max (IDM) 112A
Avalanche Energy Rating (Eas) 90 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.12000 $1.12
50 $0.89540 $44.77
100 $0.78340 $78.34
500 $0.60756 $303.78
1,000 $0.47966 $0.47966
PHP27NQ11T,127 Product Details

PHP27NQ11T,127 Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 90 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1240pF @ 25V.This device conducts a continuous drain current (ID) of 27.6A, which is the maximum continuous current transistor can conduct.Using VGS=110V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 110V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 32 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 112A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 12 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.With 110V power, it supports a dual voltage supply of up to maximum.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

PHP27NQ11T,127 Features


the avalanche energy rating (Eas) is 90 mJ
a continuous drain current (ID) of 27.6A
a drain-to-source breakdown voltage of 110V voltage
the turn-off delay time is 32 ns
based on its rated peak drain current 112A.


PHP27NQ11T,127 Applications


There are a lot of Nexperia USA Inc.
PHP27NQ11T,127 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching

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