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PMBT2222AMBYL

PMBT2222AMBYL

PMBT2222AMBYL

Nexperia USA Inc.

PMBT2222AMBYL datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

PMBT2222AMBYL Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Mounting Type Surface Mount
Package / Case SC-101, SOT-883
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 250mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 10V
Current - Collector Cutoff (Max) 10nA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 40V
Current - Collector (Ic) (Max) 600mA
Frequency - Transition 340MHz
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.236000 $0.236
10 $0.222642 $2.22642
100 $0.210039 $21.0039
500 $0.198150 $99.075
1000 $0.186934 $186.934
PMBT2222AMBYL Product Details

PMBT2222AMBYL Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 150mA 10V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 50mA, 500mA.Single BJT transistor shows a 40V maximal voltage - Collector EmSingle BJT transistorter Breakdown.

PMBT2222AMBYL Features


the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA

PMBT2222AMBYL Applications


There are a lot of Nexperia USA Inc. PMBT2222AMBYL applications of single BJT transistors.

  • Muting
  • Inverter
  • Interface
  • Driver

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