2N5401YTA Overview

This device has a DC current gain of 60 @ 10mA 5V, which is the ratio between the collector current and the base current.When VCE saturation is 500mV @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.Its current rating is -600mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 100MHz.Single BJT transistor is possible to have a collector current as low as 600mA volts at Single BJT transistors maximum.

2N5401YTA Features

the DC current gain for this device is 60 @ 10mA 5V
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is -600mA
a transition frequency of 100MHz

2N5401YTA Applications

There are a lot of ON Semiconductor 2N5401YTA applications of single BJT transistors.

• Muting
• Inverter
• Driver
• Interface