2N5885G Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 20 @ 10A 4V.As it features a collector emitter saturation voltage of 1V, it allows for maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 4V @ 6.25A, 25A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (600mA).There is a transition frequency of 4MHz in the part.Single BJT transistor is possible for the collector current to fall as low as 25A volts at Single BJT transistors maximum.

2N5885G Features

the DC current gain for this device is 20 @ 10A 4V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 4V @ 6.25A, 25A
the emitter base voltage is kept at 5V
the current rating of this device is 600mA
a transition frequency of 4MHz

2N5885G Applications

There are a lot of ON Semiconductor 2N5885G applications of single BJT transistors.

• Driver
• Inverter
• Muting
• Interface