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ZTX696B

ZTX696B

ZTX696B

Diodes Incorporated

ZTX696B datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

ZTX696B Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case E-Line-3
Number of Pins 3
Weight 453.59237mg
Transistor Element Material SILICON
Manufacturer Package Identifier E-Line
Operating Temperature -55°C~200°C TJ
Packaging Bulk
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 180V
Max Power Dissipation 1W
Terminal Form WIRE
Peak Reflow Temperature (Cel) 260
Current Rating 500mA
Frequency 70MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number ZTX696B
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 1W
Transistor Application SWITCHING
Gain Bandwidth Product 70MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 180V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 200mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 200mA
Collector Emitter Breakdown Voltage 180V
Transition Frequency 70MHz
Collector Emitter Saturation Voltage 250mV
Collector Base Voltage (VCBO) 180V
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current 500mA
Height 4.01mm
Length 4.77mm
Width 2.41mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.94000 $0.94
10 $0.83600 $8.36
100 $0.65210 $65.21
500 $0.53866 $269.33
1,000 $0.42525 $0.42525
ZTX696B Product Details

ZTX696B Overview


This device has a DC current gain of 150 @ 200mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 250mV, which allows maximum flexibilSingle BJT transistory in design.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 250mV @ 5mA, 200mA.Single BJT transistor is essential to maintain the continuous collector voltage at 500mA to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 500mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 70MHz.Maximum collector currents can be below 500mA volts.

ZTX696B Features


the DC current gain for this device is 150 @ 200mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 5mA, 200mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 70MHz

ZTX696B Applications


There are a lot of Diodes Incorporated ZTX696B applications of single BJT transistors.

  • Interface
  • Muting
  • Inverter
  • Driver

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