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PMBT2907AMBYL

PMBT2907AMBYL

PMBT2907AMBYL

Nexperia USA Inc.

PMBT2907AMBYL datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

PMBT2907AMBYL Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Mounting Type Surface Mount
Package / Case SC-101, SOT-883
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 250mW
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 10V
Current - Collector Cutoff (Max) 10nA ICBO
Vce Saturation (Max) @ Ib, Ic 1.6V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 60V
Current - Collector (Ic) (Max) 600mA
Frequency - Transition 210MHz
Pricing & Ordering
Quantity Unit Price Ext. Price
10,000 $0.04452 $0.4452
30,000 $0.04221 $1.2663
50,000 $0.03990 $1.995
100,000 $0.03597 $3.597
250,000 $0.03528 $8.82
PMBT2907AMBYL Product Details

PMBT2907AMBYL Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 10V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.The device exhibits a collector-emitter breakdown at 60V.

PMBT2907AMBYL Features


the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA

PMBT2907AMBYL Applications


There are a lot of Nexperia USA Inc. PMBT2907AMBYL applications of single BJT transistors.

  • Muting
  • Interface
  • Driver
  • Inverter

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