PN2222TA Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA 10mV.As it features a collector emitter saturation voltage of 1V, it allows for maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.The current rating of this fuse is 600mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.There is a transition frequency of 300MHz in the part.Single BJT transistor can be broken down at a voltage of 30V volts.The maximum collector current is 600mA volts.

PN2222TA Features

the DC current gain for this device is 100 @ 150mA 10mV
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 600mA
a transition frequency of 300MHz

PN2222TA Applications

There are a lot of ON Semiconductor PN2222TA applications of single BJT transistors.

• Driver
• Inverter
• Interface
• Muting