2N4919 Overview

DC current gain in this device equals 30 @ 500mA 1V, which is the ratio of the base current to the collector current.With a collector emitter saturation voltage of 600mV, it offers maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 100mA, 1A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.This device has a current rating of 1A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.Product comes in the supplier's device package TO-225AA.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.The maximum collector current is 3A volts.

2N4919 Features

the DC current gain for this device is 30 @ 500mA 1V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
the supplier device package of TO-225AA

2N4919 Applications

There are a lot of ON Semiconductor 2N4919 applications of single BJT transistors.

• Muting
• Driver
• Interface
• Inverter