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MJD127T4

MJD127T4

MJD127T4

Rochester Electronics, LLC

MJD127T4 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

MJD127T4 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK
PackagingTape & Reel (TR)
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 1.75W
Transistor Type PNP - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 4A 4V
Current - Collector Cutoff (Max) 10μA
Vce Saturation (Max) @ Ib, Ic 4V @ 80mA, 8A
Voltage - Collector Emitter Breakdown (Max) 100V
Current - Collector (Ic) (Max) 8A
Frequency - Transition 4MHz
RoHS StatusNon-RoHS Compliant
In-Stock:8913 items

Pricing & Ordering

QuantityUnit PriceExt. Price

MJD127T4 Product Details

MJD127T4 Overview


In this device, the DC current gain is 1000 @ 4A 4V, which is the ratio between the base current and the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 4V @ 80mA, 8A.Product comes in DPAK supplier package.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.

MJD127T4 Features


the DC current gain for this device is 1000 @ 4A 4V
the vce saturation(Max) is 4V @ 80mA, 8A
the supplier device package of DPAK

MJD127T4 Applications


There are a lot of Rochester Electronics, LLC MJD127T4 applications of single BJT transistors.

  • Inverter
  • Interface
  • Muting
  • Driver

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