MJD127T4 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
MJD127T4 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
DPAK
Packaging
Tape & Reel (TR)
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
1.75W
Transistor Type
PNP - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 4A 4V
Current - Collector Cutoff (Max)
10μA
Vce Saturation (Max) @ Ib, Ic
4V @ 80mA, 8A
Voltage - Collector Emitter Breakdown (Max)
100V
Current - Collector (Ic) (Max)
8A
Frequency - Transition
4MHz
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
2,500
$0.26938
$0.53876
5,000
$0.25286
$1.2643
12,500
$0.25011
$3.00132
MJD127T4 Product Details
MJD127T4 Overview
In this device, the DC current gain is 1000 @ 4A 4V, which is the ratio between the base current and the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 4V @ 80mA, 8A.Product comes in DPAK supplier package.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
MJD127T4 Features
the DC current gain for this device is 1000 @ 4A 4V the vce saturation(Max) is 4V @ 80mA, 8A the supplier device package of DPAK
MJD127T4 Applications
There are a lot of Rochester Electronics, LLC MJD127T4 applications of single BJT transistors.