BCP56-10T1G Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 63 @ 150mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 500mV, which allows maximum flexibilSingle BJT transistory in design.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.An emitter's base voltage can be kept at 5V to gain high efficiency.The current rating of this fuse is 1A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.In the part, the transition frequency is 130MHz.An input voltage of 80V volts is the breakdown voltage.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.

BCP56-10T1G Features

the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 130MHz

BCP56-10T1G Applications

There are a lot of ON Semiconductor BCP56-10T1G applications of single BJT transistors.

• Driver
• Inverter
• Interface
• Muting