MJD122T4 Overview
In this device, the DC current gain is 1000 @ 4A 4V, which is the ratio between the base current and the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 2V @ 15mA, 4A.A constant collector voltage of 8A is necessary for high efficiency.The base voltage of the emitter can be kept at 5V to achieve high efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 5A.As you can see, the part has a transition frequency of 4MHz.Breakdown input voltage is 100V volts.A maximum collector current of 8A volts can be achieved.
MJD122T4 Features
the DC current gain for this device is 1000 @ 4A 4V
the vce saturation(Max) is 2V @ 15mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is 5A
a transition frequency of 4MHz
MJD122T4 Applications
There are a lot of ON Semiconductor MJD122T4 applications of single BJT transistors.
- Muting
- Inverter
- Interface
- Driver
