NTZD3155CT1G

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NTZD3155CT1G

Manufacturer part number:NTZD3155CT1G

Manufacturer:ON Semiconductor

Description:NTZD3155CT1G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:NTZD3155CT1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Lifecycle Status	ACTIVE (Last Updated: 3 days ago)
Contact Plating	Tin
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Surface Mount	YES
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2007
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Resistance	500mOhm
Subcategory	Other Transistors
Max Power Dissipation	250mW
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	260
Current Rating	540mA
[email protected] Reflow Temperature-Max (s)	40
Base Part Number	NTZD3155C
Pin Count	6
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	250mW
Turn On Delay Time	10 ns
FET Type	N and P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	550m Ω @ 540mA, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	150pF @ 16V
Current - Continuous Drain (Id) @ 25°C	540mA 430mA
Gate Charge (Qg) (Max) @ Vgs	2.5nC @ 4.5V
Rise Time	12ns
Drain to Source Voltage (Vdss)	20V
Polarity/Channel Type	N-CHANNEL AND P-CHANNEL
Fall Time (Typ)	12 ns
Turn-Off Delay Time	35 ns
Continuous Drain Current (ID)	540mA
Threshold Voltage	1V
Gate to Source Voltage (Vgs)	6V
Drain Current-Max (Abs) (ID)	0.54A
Drain to Source Breakdown Voltage	-20V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Height	600μm
Length	1.7mm
Width	1.3mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free