PMDPB30XN,115

new-10%

Manufacturer part number:PMDPB30XN,115

Manufacturer:Nexperia USA Inc.

Description:PMDPB30XN Series 20 V 40 mOhm 490 mW Dual N-Channel TrenchMOS FET - DFN-2020-6

Case Package:SOT-23

Datasheet:PMDPB30XN,115 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-UDFN Exposed Pad
Number of Pins	8
Supplier Device Package	6-HUSON-EP (2x2)
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2012
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	490mW
Number of Channels	2
Element Configuration	Dual
Turn On Delay Time	40 ns
Power - Max	490mW
FET Type	2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs	40mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id	900mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	660pF @ 10V
Current - Continuous Drain (Id) @ 25°C	4A
Gate Charge (Qg) (Max) @ Vgs	21.7nC @ 4.5V
Rise Time	15ns
Drain to Source Voltage (Vdss)	20V
Fall Time (Typ)	16 ns
Turn-Off Delay Time	4 ns
Continuous Drain Current (ID)	4A
Gate to Source Voltage (Vgs)	650mV
Input Capacitance	660pF
FET Feature	Logic Level Gate
Drain to Source Resistance	32mOhm
Rds On Max	40 mΩ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant