TSM680P06DPQ56 RLG

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Manufacturer part number:TSM680P06DPQ56 RLG

Manufacturer:Taiwan Semiconductor Corporation

Description:MOSFET 2 P-CH 60V 12A 8PDFN

Case Package:SOT-23

Datasheet:TSM680P06DPQ56 RLG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	20 Weeks
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Digi-Reel®
Published	2015
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PDSO-F6
Number of Elements	2
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Power - Max	3.5W
FET Type	2 P-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	68m Ω @ 6A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	870pF @ 30V
Current - Continuous Drain (Id) @ 25°C	12A Tc
Gate Charge (Qg) (Max) @ Vgs	16.4nC @ 10V
Drain to Source Voltage (Vdss)	60V
Drain Current-Max (Abs) (ID)	12A
Drain-source On Resistance-Max	0.068Ohm
Pulsed Drain Current-Max (IDM)	48A
DS Breakdown Voltage-Min	60V
Avalanche Energy Rating (Eas)	7.2 mJ
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Standard
RoHS Status	ROHS3 Compliant