QS8J4TR

new-10%

Manufacturer part number:QS8J4TR

Manufacturer:ROHM Semiconductor

Description:MOSFET 2P-CH 30V 4A TSMT8

Case Package:SOT-23

Datasheet:QS8J4TR Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	20 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SMD, Flat Lead
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Published	2012
JESD-609 Code	e2
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	Tin/Copper (Sn/Cu)
Subcategory	Other Transistors
Max Power Dissipation	550mW
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	10
Pin Count	8
Number of Elements	2
Number of Channels	2
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	8 ns
FET Type	2 P-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	56m Ω @ 4A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	800pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	13nC @ 10V
Rise Time	20ns
Drain to Source Voltage (Vdss)	30V
Fall Time (Typ)	50 ns
Turn-Off Delay Time	80 ns
Continuous Drain Current (ID)	4A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	4A
Drain-source On Resistance-Max	0.056Ohm
Drain to Source Breakdown Voltage	-30V
Pulsed Drain Current-Max (IDM)	16A
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free