PMDPB58UPE,115

new-10%

Manufacturer part number:PMDPB58UPE,115

Manufacturer:Nexperia USA Inc.

Description:MOSFET 2P-CH 20V 3.6A HUSON6

Case Package:SOT-23

Datasheet:PMDPB58UPE,115 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Mounting Type	Surface Mount
Package / Case	6-UDFN Exposed Pad
Surface Mount	YES
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2012
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
Terminal Finish	Tin (Sn)
Max Power Dissipation	515mW
Pin Count	6
Number of Elements	2
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	7 ns
FET Type	2 P-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	67m Ω @ 2A, 4.5V
Vgs(th) (Max) @ Id	950mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	804pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	9.5nC @ 4.5V
Rise Time	15ns
Drain to Source Voltage (Vdss)	20V
Fall Time (Typ)	14 ns
Turn-Off Delay Time	41 ns
Continuous Drain Current (ID)	3.6A
Gate to Source Voltage (Vgs)	8V
Max Dual Supply Voltage	-20V
Pulsed Drain Current-Max (IDM)	14.4A
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Radiation Hardening	No
RoHS Status	ROHS3 Compliant