STL50DN6F7 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from STMicroelectronics stock available on our website
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STL50DN6F7 Datasheet
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Specifications
Name
Value
Type
Parameter
Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerVDFN
Number of Pins
8
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
STripFET™
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Max Power Dissipation
62.5W
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
not_compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
STL50
JESD-30 Code
R-PDSO-F6
Number of Elements
2
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
2 N-Channel (Dual)
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
11m Ω @ 7.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1035pF @ 30V
Current - Continuous Drain (Id) @ 25°C
57A Tc
Gate Charge (Qg) (Max) @ Vgs
17nC @ 10V
Drain to Source Voltage (Vdss)
60V
Continuous Drain Current (ID)
57A
Drain-source On Resistance-Max
0.011Ohm
DS Breakdown Voltage-Min
60V
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Standard
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
STL50DN6F7 Product Details
STL50DN6F7 Description
By combining STripFETTM F7 technology with an improved trench gate structure, this dual N-channel Power MOSFET achieves extremely low onstate resistance while also lowering internal capacitance and gate charge for quicker and more effective switching. These devices are made to offer a high level of dv/dt capability for the most demanding applications in addition to a significant reduction in on-resistance.