PMDT290UCE,115

new-10%

Manufacturer part number:PMDT290UCE,115

Manufacturer:Nexperia USA Inc.

Description:MOSFET N/P-CH 20V SOT666

Case Package:SOT-23

Datasheet:PMDT290UCE,115 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	4 Weeks
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Surface Mount	YES
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2011
Series	Automotive, AEC-Q101, TrenchMOS™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
Terminal Finish	Tin (Sn)
Max Power Dissipation	500mW
Terminal Form	FLAT
Pin Count	6
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	330mW
FET Type	N and P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	380m Ω @ 500mA, 4.5V
Vgs(th) (Max) @ Id	950mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	83pF @ 10V
Current - Continuous Drain (Id) @ 25°C	800mA 550mA
Gate Charge (Qg) (Max) @ Vgs	0.68nC @ 4.5V
Rise Time	30ns
Drain to Source Voltage (Vdss)	20V
Polarity/Channel Type	N-CHANNEL AND P-CHANNEL
Fall Time (Typ)	72 ns
Continuous Drain Current (ID)	550mA
Gate to Source Voltage (Vgs)	8V
Drain Current-Max (Abs) (ID)	0.8A
Drain-source On Resistance-Max	0.38Ohm
Drain to Source Breakdown Voltage	-20V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free