PMDT670UPE,115

new-10%

Manufacturer part number:PMDT670UPE,115

Manufacturer:Nexperia USA Inc.

Description:MOSFET 2P-CH 20V 0.55A SOT666

Case Package:SOT-23

Datasheet:PMDT670UPE,115 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	4 Weeks
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Surface Mount	YES
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2011
Series	Automotive, AEC-Q101, TrenchMOS™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
Terminal Finish	Tin (Sn)
Max Power Dissipation	330mW
Terminal Form	FLAT
Pin Count	6
Number of Elements	2
Operating Mode	ENHANCEMENT MODE
Power Dissipation	390mW
Turn On Delay Time	18 ns
FET Type	2 P-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	850m Ω @ 400mA, 4.5V
Vgs(th) (Max) @ Id	1.3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	87pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	1.14nC @ 4.5V
Rise Time	30ns
Drain to Source Voltage (Vdss)	20V
Fall Time (Typ)	72 ns
Turn-Off Delay Time	80 ns
Continuous Drain Current (ID)	550mA
Gate to Source Voltage (Vgs)	8V
Max Dual Supply Voltage	-20V
Drain Current-Max (Abs) (ID)	0.55A
Drain-source On Resistance-Max	0.85Ohm
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free