NTJD4105CT2G

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Manufacturer part number:NTJD4105CT2G

Manufacturer:ON Semiconductor

Description:NTJD4105CT2G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:NTJD4105CT2G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Lifecycle Status	ACTIVE (Last Updated: 6 days ago)
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Surface Mount	YES
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Resistance	220mOhm
Terminal Finish	Tin (Sn)
Subcategory	Other Transistors
Max Power Dissipation	270mW
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	630mA
[email protected] Reflow Temperature-Max (s)	40
Base Part Number	NTJD4105C
Pin Count	6
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	270mW
FET Type	N and P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	375m Ω @ 630mA, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	46pF @ 20V
Current - Continuous Drain (Id) @ 25°C	630mA 775mA
Gate Charge (Qg) (Max) @ Vgs	3nC @ 4.5V
Rise Time	23ns
Drain to Source Voltage (Vdss)	20V 8V
Polarity/Channel Type	N-CHANNEL AND P-CHANNEL
Fall Time (Typ)	36 ns
Turn-Off Delay Time	50 ns
Continuous Drain Current (ID)	775mA
Gate to Source Voltage (Vgs)	8V
Drain Current-Max (Abs) (ID)	1.1A
Drain to Source Breakdown Voltage	-8V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Feedback Cap-Max (Crss)	5 pF
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free