TC6215TG-G

new-10%

Manufacturer part number:TC6215TG-G

Manufacturer:Microchip Technology

Description:N & P-CHANNEL ENHANCEMENT-MODE DUAL MOSFET8 SOIC 3.90mm(.150in) T/R

Case Package:SOT-23

Datasheet:TC6215TG-G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	6 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	84.99187mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2008
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - annealed
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Base Part Number	TC621
Qualification Status	Not Qualified
Number of Elements	2
Number of Channels	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	2.5 ns
FET Type	N and P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	4 Ω @ 2A, 10V
Vgs(th) (Max) @ Id	2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	120pF @ 25V
Rise Time	2.3ns
Drain to Source Voltage (Vdss)	150V
Polarity/Channel Type	N-CHANNEL AND P-CHANNEL
Fall Time (Typ)	11.3 ns
Turn-Off Delay Time	17.2 ns
Continuous Drain Current (ID)	36A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	5Ohm
Drain to Source Breakdown Voltage	-150V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Standard
Height	1.65mm
Length	4.9mm
Width	3.8mm
RoHS Status	ROHS3 Compliant