IRF9953TRPBF

new-10%

Manufacturer part number:IRF9953TRPBF

Manufacturer:Infineon Technologies

Description:MOSFET 2P-CH 30V 2.3A 8-SOIC

Case Package:SOT-23

Datasheet:IRF9953TRPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2004
Series	HEXFET®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
Resistance	250mOhm
Additional Feature	HIGH RELIABILITY
Voltage - Rated DC	-30V
Max Power Dissipation	2W
Terminal Form	GULL WING
Current Rating	-2.3A
Base Part Number	IRF9953PBF
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2W
Turn On Delay Time	9.7 ns
FET Type	2 P-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	250m Ω @ 1A, 10V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	190pF @ 15V
Gate Charge (Qg) (Max) @ Vgs	12nC @ 10V
Rise Time	14ns
Drain to Source Voltage (Vdss)	30V
Fall Time (Typ)	6.9 ns
Turn-Off Delay Time	20 ns
Continuous Drain Current (ID)	2.3A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	-30V
Pulsed Drain Current-Max (IDM)	10A
Avalanche Energy Rating (Eas)	57 mJ
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Standard
Height	1.4986mm
Length	4.9784mm
Width	3.9878mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead, Lead Free