FDR8508P

new-10%

Manufacturer part number:FDR8508P

Manufacturer:Rochester Electronics, LLC

Description:SMALL SIGNAL P-CHANNEL MOSFET

Case Package:SOT-23

Datasheet:FDR8508P Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	8-LSOP (0.130, 3.30mm Width)
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	PowerTrench®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
Terminal Finish	MATTE TIN
Additional Feature	LOGIC LEVEL COMPATIBLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	8
JESD-30 Code	R-PDSO-G8
Qualification Status	COMMERCIAL
Number of Elements	2
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Power - Max	800mW
FET Type	2 P-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	52m Ω @ 3A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	750pF @ 15V
Current - Continuous Drain (Id) @ 25°C	3A
Gate Charge (Qg) (Max) @ Vgs	12nC @ 5V
Drain to Source Voltage (Vdss)	30V
Drain Current-Max (Abs) (ID)	3A
Drain-source On Resistance-Max	0.052Ohm
DS Breakdown Voltage-Min	30V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
RoHS Status	ROHS3 Compliant