STS8C5H30L

new-10%

Manufacturer part number:STS8C5H30L

Manufacturer:STMicroelectronics

Description:Trans MOSFET N/P-CH 30V 8A/5.4A 8-Pin SO N T/R

Case Package:SOT-23

Datasheet:STS8C5H30L Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	NRND (Last Updated: 8 months ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Series	STripFET™ III
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Resistance	22MOhm
Terminal Finish	Matte Tin (Sn)
Subcategory	Other Transistors
Max Power Dissipation	2W
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	8A
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	STS8C5
Pin Count	8
Number of Elements	2
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2W
FET Type	N and P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	22m Ω @ 4A, 10V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	857pF @ 25V
Current - Continuous Drain (Id) @ 25°C	8A 5.4A
Gate Charge (Qg) (Max) @ Vgs	10nC @ 5V
Rise Time	35ns
Polarity/Channel Type	N-CHANNEL AND P-CHANNEL
Fall Time (Typ)	35 ns
Turn-Off Delay Time	125 ns
Continuous Drain Current (ID)	8A
Threshold Voltage	1.6V
Gate to Source Voltage (Vgs)	16V
Drain Current-Max (Abs) (ID)	8A
Drain to Source Breakdown Voltage	30V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Height	1.25mm
Length	5mm
Width	4mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free