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FDPF5N50FT

  • FDPF5N50FT
  • FDPF5N50FT

FDPF5N50FT

FDPF5N50FT

ON Semiconductor

MOSFET (Metal Oxide) N-Channel Tube 1.55 Ω @ 2.25A, 10V ±30V 700pF @ 25V 8nC @ 10V TO-220-3 Full Pack

SOT-23

FDPF5N50FT Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Factory Lead Time 4 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Weight 2.27g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series UniFET™
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 28W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 28W
Case Connection ISOLATED
Turn On Delay Time 13 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.55 Ω @ 2.25A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 700pF @ 25V
Current - Continuous Drain (Id) @ 25°C 4.5A Tc
Gate Charge (Qg) (Max) @ Vgs 8nC @ 10V
Rise Time 22ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 28 ns
Continuous Drain Current (ID) 4.5A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 500V
Height 16.07mm
Length 10.36mm
Width 4.9mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.86000 $1.86
10 $1.65000 $16.5
100 $1.30410 $130.41
500 $1.01136 $505.68
1,000 $0.79844 $0.79844
FDPF5N50FT Product Details

FDPF5N50FT Description


A high voltage MOSFET family called UniFETTM MOSFET is based on DMOS and planar stripe technology. FDPF5N50FT MOSFET is designed to offer superior switching performance, increased avalanche energy strength, and reduced on-state resistance. The lifetime control of UniFET FRFET? MOSFET has improved the reverse recovery performance of the body diode. While most planar MOSFETs have a trr of over 200ns and a reverse dv/dt immunity of 4.5V/ns, this device has a trr of less than 100ns. Therefore, in certain applications where the performance of the MOSFET's body diode is critical, it can eliminate an additional component and increase system reliability. For switching power converter applications such power factor correction (PFC), flat panel display (FPD) TV power, ATX, and electronic lamp ballasts, this device family is appropriate.



FDPF5N50FT Features


  • Low Crss ( Typ. 5pF)

  • 100% avalanche tested

  • Low gate charge ( Typ. 11nC)

  • RDS(on) = 1.55? ( Typ.)@ VGS = 10V, ID = 2.25A



FDPF5N50FT Applications


  • Lighting

  • LCD / LED / PDP TV

  • AC-DC Power Supplies

  • AC-DC Power Supplies

  • Uninterruptible Power Supplies

  • This product is general usage and suitable for many different applications.


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