SI4456DY-T1-GE3

new-10%

Manufacturer part number:SI4456DY-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 40V 33A 8-SOIC

Case Package:SOT-23

Datasheet:SI4456DY-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	186.993455mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2015
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Pin Count	8
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	3.5W Ta 7.8W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3.5W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	3.8m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	2.8V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	5670pF @ 20V
Current - Continuous Drain (Id) @ 25°C	33A Tc
Gate Charge (Qg) (Max) @ Vgs	122nC @ 10V
Drain to Source Voltage (Vdss)	40V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	3.3A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	23A
Pulsed Drain Current-Max (IDM)	70A
DS Breakdown Voltage-Min	40V
Nominal Vgs	2.8 V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant