PMST5088,115 Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 300 @ 100μA 5V.When VCE saturation is 500mV @ 1mA, 10mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 4.5V can achieve high levels of efficiency.A transition frequency of 100MHz is present in the part.A maximum collector current of 100mA volts can be achieved.

PMST5088,115 Features

the DC current gain for this device is 300 @ 100μA 5V
the vce saturation(Max) is 500mV @ 1mA, 10mA
the emitter base voltage is kept at 4.5V
a transition frequency of 100MHz

PMST5088,115 Applications

There are a lot of Nexperia USA Inc. PMST5088,115 applications of single BJT transistors.

• Driver
• Inverter
• Interface
• Muting