2SA2039-H datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2SA2039-H Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Lifecycle Status
ACTIVE, NOT REC (Last Updated: 1 week ago)
Contact Plating
Lead, Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Packaging
Bulk
Published
2012
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Power Dissipation
800mW
Base Part Number
2SA2039
Power - Max
800mW
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
430mV
Max Collector Current
5A
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 500mA 2V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
430mV @ 100mA, 2A
Collector Emitter Breakdown Voltage
50V
Frequency - Transition
360MHz
Emitter Base Voltage (VEBO)
6V
hFE Min
200
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.738000
$0.738
10
$0.696226
$6.96226
100
$0.656817
$65.6817
500
$0.619639
$309.8195
1000
$0.584565
$584.565
2SA2039-H Product Details
2SA2039-H Overview
In this device, the DC current gain is 200 @ 500mA 2V, which is the ratio between the base current and the collector current.When VCE saturation is 430mV @ 100mA, 2A, transistor means Ic has reached transistors maximum value (saturated).An emitter's base voltage can be kept at 6V to gain high efficiency.Collector current can be as low as 5A volts at its maximum.
2SA2039-H Features
the DC current gain for this device is 200 @ 500mA 2V the vce saturation(Max) is 430mV @ 100mA, 2A the emitter base voltage is kept at 6V
2SA2039-H Applications
There are a lot of ON Semiconductor 2SA2039-H applications of single BJT transistors.