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2SA2039-H

2SA2039-H

2SA2039-H

ON Semiconductor

2SA2039-H datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

2SA2039-H Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE, NOT REC (Last Updated: 1 week ago)
Contact Plating Lead, Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Packaging Bulk
Published 2012
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 800mW
Base Part Number 2SA2039
Power - Max 800mW
Transistor Type PNP
Collector Emitter Voltage (VCEO) 430mV
Max Collector Current 5A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 500mA 2V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 430mV @ 100mA, 2A
Collector Emitter Breakdown Voltage 50V
Frequency - Transition 360MHz
Emitter Base Voltage (VEBO) 6V
hFE Min 200
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.738000 $0.738
10 $0.696226 $6.96226
100 $0.656817 $65.6817
500 $0.619639 $309.8195
1000 $0.584565 $584.565
2SA2039-H Product Details

2SA2039-H Overview


In this device, the DC current gain is 200 @ 500mA 2V, which is the ratio between the base current and the collector current.When VCE saturation is 430mV @ 100mA, 2A, transistor means Ic has reached transistors maximum value (saturated).An emitter's base voltage can be kept at 6V to gain high efficiency.Collector current can be as low as 5A volts at its maximum.

2SA2039-H Features


the DC current gain for this device is 200 @ 500mA 2V
the vce saturation(Max) is 430mV @ 100mA, 2A
the emitter base voltage is kept at 6V

2SA2039-H Applications


There are a lot of ON Semiconductor 2SA2039-H applications of single BJT transistors.

  • Muting
  • Driver
  • Inverter
  • Interface

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