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MJD2955-1G

MJD2955-1G

MJD2955-1G

Rochester Electronics, LLC

MJD2955-1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

MJD2955-1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package I-PAK
Operating Temperature -55°C~150°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 1.75W
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 4A 4V
Current - Collector Cutoff (Max) 50μA
Vce Saturation (Max) @ Ib, Ic 8V @ 3.3A, 10A
Voltage - Collector Emitter Breakdown (Max) 60V
Current - Collector (Ic) (Max) 10A
Frequency - Transition 2MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.31000 $0.31
500 $0.3069 $153.45
1000 $0.3038 $303.8
1500 $0.3007 $451.05
2000 $0.2976 $595.2
2500 $0.2945 $736.25
MJD2955-1G Product Details

MJD2955-1G Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 20 @ 4A 4V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 8V @ 3.3A, 10A.Product comes in I-PAK supplier package.The device exhibits a collector-emitter breakdown at 60V.

MJD2955-1G Features


the DC current gain for this device is 20 @ 4A 4V
the vce saturation(Max) is 8V @ 3.3A, 10A
the supplier device package of I-PAK

MJD2955-1G Applications


There are a lot of Rochester Electronics, LLC MJD2955-1G applications of single BJT transistors.

  • Muting
  • Inverter
  • Interface
  • Driver

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