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MJD2955-1G

MJD2955-1G

MJD2955-1G

Rochester Electronics, LLC

MJD2955-1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

MJD2955-1G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package I-PAK
Operating Temperature-55°C~150°C TJ
PackagingTube
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 1.75W
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 4A 4V
Current - Collector Cutoff (Max) 50μA
Vce Saturation (Max) @ Ib, Ic 8V @ 3.3A, 10A
Voltage - Collector Emitter Breakdown (Max) 60V
Current - Collector (Ic) (Max) 10A
Frequency - Transition 2MHz
RoHS StatusROHS3 Compliant
In-Stock:27783 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.31000$0.31
500$0.3069$153.45
1000$0.3038$303.8
1500$0.3007$451.05
2000$0.2976$595.2
2500$0.2945$736.25

MJD2955-1G Product Details

MJD2955-1G Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 20 @ 4A 4V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 8V @ 3.3A, 10A.Product comes in I-PAK supplier package.The device exhibits a collector-emitter breakdown at 60V.

MJD2955-1G Features


the DC current gain for this device is 20 @ 4A 4V
the vce saturation(Max) is 8V @ 3.3A, 10A
the supplier device package of I-PAK

MJD2955-1G Applications


There are a lot of Rochester Electronics, LLC MJD2955-1G applications of single BJT transistors.

  • Muting
  • Inverter
  • Interface
  • Driver

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