MJD2955-1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
MJD2955-1G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package
I-PAK
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
1.75W
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 4A 4V
Current - Collector Cutoff (Max)
50μA
Vce Saturation (Max) @ Ib, Ic
8V @ 3.3A, 10A
Voltage - Collector Emitter Breakdown (Max)
60V
Current - Collector (Ic) (Max)
10A
Frequency - Transition
2MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.31000
$0.31
500
$0.3069
$153.45
1000
$0.3038
$303.8
1500
$0.3007
$451.05
2000
$0.2976
$595.2
2500
$0.2945
$736.25
MJD2955-1G Product Details
MJD2955-1G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 20 @ 4A 4V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 8V @ 3.3A, 10A.Product comes in I-PAK supplier package.The device exhibits a collector-emitter breakdown at 60V.
MJD2955-1G Features
the DC current gain for this device is 20 @ 4A 4V the vce saturation(Max) is 8V @ 3.3A, 10A the supplier device package of I-PAK
MJD2955-1G Applications
There are a lot of Rochester Electronics, LLC MJD2955-1G applications of single BJT transistors.