BF720T1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BF720T1G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Surface Mount
YES
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Cut Tape (CT)
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Type
General Purpose
Subcategory
Other Transistors
Voltage - Rated DC
300V
Max Power Dissipation
1.5W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
100mA
Frequency
60MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
BF720
Pin Count
4
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.5W
Case Connection
COLLECTOR
Gain Bandwidth Product
60MHz
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
300V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 25mA 20V
Current - Collector Cutoff (Max)
10nA ICBO
Vce Saturation (Max) @ Ib, Ic
600mV @ 5mA, 30mA
Collector Emitter Breakdown Voltage
300V
Transition Frequency
60MHz
Collector Emitter Saturation Voltage
600mV
Max Breakdown Voltage
300V
Collector Base Voltage (VCBO)
300V
Emitter Base Voltage (VEBO)
5V
hFE Min
50
Height
1.65mm
Length
6.7mm
Width
3.7mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.128090
$0.12809
10
$0.120840
$1.2084
100
$0.114000
$11.4
500
$0.107547
$53.7735
1000
$0.101460
$101.46
BF720T1G Product Details
BF720T1G Overview
In this device, the DC current gain is 50 @ 25mA 20V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.As it features a collector emitter saturation voltage of 600mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 100mA.As you can see, the part has a transition frequency of 60MHz.There is a breakdown input voltage of 300V volts that it can take.A maximum collector current of 100mA volts can be achieved.
BF720T1G Features
the DC current gain for this device is 50 @ 25mA 20V a collector emitter saturation voltage of 600mV the vce saturation(Max) is 600mV @ 5mA, 30mA the emitter base voltage is kept at 5V the current rating of this device is 100mA a transition frequency of 60MHz
BF720T1G Applications
There are a lot of ON Semiconductor BF720T1G applications of single BJT transistors.