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PMV50EPEAR

PMV50EPEAR

PMV50EPEAR

Nexperia USA Inc.

P-Channel Tape & Reel (TR) 45mOhm @ 4.2A, 10V ±20V 793pF @ 15V 19.2nC @ 10V 30V TO-236-3, SC-59, SOT-23-3

SOT-23

PMV50EPEAR Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package TO-236AB
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power Dissipation-Max 310mW Ta 455mW Tc
FET Type P-Channel
Rds On (Max) @ Id, Vgs 45mOhm @ 4.2A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 793pF @ 15V
Current - Continuous Drain (Id) @ 25°C 4.2A Ta
Gate Charge (Qg) (Max) @ Vgs 19.2nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Drain to Source Resistance 35mOhm
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.11596 $0.34788
6,000 $0.11024 $0.66144
15,000 $0.10166 $1.5249
30,000 $0.09594 $2.8782
75,000 $0.08736 $6.552
PMV50EPEAR Product Details

PMV50EPEAR Description


P-channel augmentation mode Trench MOSFET technology is used to create a Field-Effect Transistor (FET) in a tiny SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic container.



PMV50EPEAR Features


  • Very fast switching 

  • AEC-Q101 qualified

  • Logic level compatible

  • Trench MOSFET technology

  • ElectroStatic Discharge (ESD) protection > 2 kV HBM



PMV50EPEAR Applications


  • Medical


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